photomultiplier tube R9876 figure 2: typical spectral response figure 1: electro optical structure tpmsb0230ea tpmsc0024ea light photoelectron trajectories grid glass bulb anode 9th dynode photocathode 2nd dynode 1st dynode 100 1000 10 1 0.1 0.01 100 200 300 400 500 600 700 800 900 1000 wavelength (nm) cathode radiant sensitivity (ma/w) quantum efficiency (%) conventional pmt (r928) cathode radiant sensitivity quantum efficiency R9876 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?010 hamamatsu photoni cs k.k. subject to local technical requirements and regulations, availability of products included in this promotional material may var y. please consult with our sales office. features high sensitivity at 900 nm quantum efficiency .................................. radiant ................................................. wide spectral response .................. high signal to noise ratio applications biomedical analysis blood analyzer, flow cytometer, dna sequencer spectroscopy fluorescence spectrometer, raman spectrometer, uv?is spectrometer 0.5 % (typ.) 4 ma/w (typ.) 185 nm to 950 nm high qe multialkali photocathode 28 mm (1-1/8 inch) diameter, 9-stage, side-on type
general maximum ratings (absolute maximum values) characteristlcs (at 25 c) photomultiplier tube R9876 notes a: b: c: d: averaged over any interval of 30 seconds maximum. the light source is a tungsten filament lamp operated at a distribution temperature of 2856 k. supply voltage is 100 v between the cathode and all other electrodes connected together as anode. red / white ratio is the quotient of the cathode current measured using a red filter (toshiba r-68) interposed between the light source and the tube by the cathode current measured with the filter removed under the same conditions as note b. measured with the same light source as note b and with the voltage distribution ratio shown in table 1 below. electrodes k dy1 dy2 dy3 dy4 dy5 dy6 dy7 dy8 dy9 p ratio 1 111111111 suppiy voltage: 1000 v, k: cathode, dy: dynode, p: anode table 1:voltage distribution ratio e: f: g: h: after 30 min storage in darkness the rise time is the time for the output pulse to rise from 10 % to 90 % of the peak amplitude when the entire photocathode is illuminated by a delta function light pulse. the electron transit time is the interval between the arrival of delta function light pulse at the entrance window of the tube and the time when the anode output reaches the peak amplitube. in measurement, the whole photocathode is illuminated. also called transit time jitter. this is the fluctuation in electron transit time between individual pulses in the signal photoelectron mode, and may be defined as the fwhm of the frequency distribution of electron transit times. value 1250 250 0.1 v v ma unit parameter supply voltage average anode current a typ. max. unit 5 % a/lm ma/w a/lm a/w na ns ns ns 0.5 140 4 0.4 140 4 10 3 1 10 6 0.5 2.2 22 1.2 min. quantum efficiency luminous b radiant red / white ratio c luminous d radiant anode pulse rise time f electron transit time g transit time spread (t.t.s.) h at 900 nm at 900 nm at 900 nm 100 50 parameter cathode sensitivity anode sensitivity gain d anode dark current e (supply voltage at 1 10 6 gain) time response specifications between anode and cathode between anode and last dynode parameter description / value unit spectral response wavelength of maximum response photocathode window material dynode direct interelectrode capacitances base weight operating ambient temperature storage temperature suitabie socket suitabie socket assembly 185 to 950 380 multialkali 8 24 uv glass circular-cage 9 4 6 11-pin base jedec no. b11-88 approx. 45 -30 to +50 -30 to +50 e678 11a (sold separately) e717 63 (sold separately) e717 74 (sold separately) nm nm mm pf pf g c c materiai minimum effective area structure number of stages anode to last dynode anode to all other electrodes
figure 4: socket (unit: mm) sold separately tacca0064ea e678-11a figure 3: dimensional outline and basing diagram (unit: mm) tpmsa0008ea tpmsa0009eb 1 2 4 3 5 7 6 8 9 10 k dy1 dy2 dy3 dy4 dy5 dy6 dy7 dy8 dy9 p direction of light 28.5 1.5 8 min. photocathode 24 min. 49.0 2.5 80 max. 94 max. 32.2 0.5 11 pin base jedec no. b11-88 11 bottom view (basing diagram) cross section 3.25 6.0 3.5 2.5 photo - cathode 33 5 49 3.5 38 29 4 18
tpms1076e01 aug. 2010 ip figure 5: d type socket assembly (unit: mm) sold separately warning?ersonal safety hazards electrical shock operating voltages applied to this device present a shock hazard. tacca0002eh tacca0277ea photomultiplier tube R9876 * hamamatsu also provides c4900 series compact high voltage power supplies and c6270 series dp type socket assemblies which incor- porate a dc to dc converter type high voltage power supply. potting compound r1 to r10 c1 to c3 : 330 k ? : 10 nf 3.5 33.0 0.3 49.0 0.3 29.0 0.3 38.0 0.3 4 0.7 30.0 450 10 5 31.0 0.5 housing (insulator) r10 r9 r8 r7 r6 r5 r4 r3 r2 r1 dy9 dy8 dy7 dy6 dy5 dy4 dy3 dy2 dy1 c3 c2 c1 signal gnd signal output rg-174/u(black) -hv awg22 (violet) p k 10 power supply gnd awg22 (black) socket pin no. pmt 9 8 7 6 5 4 3 2 1 11 +0 -1 e717-63 e717-74 r1 to r10 c1 to c3 : 330 k ? : 10 nf r10 r9 r8 r7 r6 r5 r4 r3 r2 r1 dy9 dy8 dy7 dy6 dy5 dy4 dy3 dy2 dy1 c3 c2 c1 signal output (a) -hv (k) p k 10 gnd (g) socket pin no. 9 8 7 6 5 4 3 2 1 11 pmt * "wiring diagram at above applies when -hv is supplied." to supply +hv,connect the pin "g" to+hv, and the pin "k" to the gnd. re- fer to "(d) d-2" on page 87 for the connection method. 26.0 0.2 22.4 0.2 32.0 0.5 26.0 0.2 32.0 0.5 2 7 2.7 14.0 0.5 30 10 0.7 4- 2.8 housing (insulator) r13 k a g hamamatsu photonics k.k., electron tube division 314-5, shimokanzo, iwata city, shizuoka pref., 438-0193, japan, telephone: (81)539/62-5248, fax: (81)539/62-2205 u.s.a.: hamamatsu corporation: 360 foothill road, p. o. box 6910, bridgewater. n.j. 08807-0910, u.s.a., telephone: (1)908-231-0960, fa x: (1)908-231-1218 e-mail: usa@hamamatsu.com germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49)8152-375-0, f ax: (49)8152-2658 e-mail: info@hamamatsu.de france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, telephone: (3 3)1 69 53 71 00, fax: (33)1 69 53 71 10 e-mail: infos@hamamatsu.fr united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road welwyn garden city hertfordshire al7 1bw, united kingdom, teleph one: 44-(0)1707-294888, fax: 44(0)1707-325777 e-mail: info@hamamatsu.co.uk north europe: hamamatsu photonics norden ab: smidesv ? gen 12, se-171-41 solna, sweden, telephone: (46)8-509-031-00, fax: (46)8-509-031-01 e-mail: info@hamamatsu.se italy: hamamatsu photonics italia: s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39)02-935 81 733, fax: (39)02-935 81 741 e-mail: info@hamamatsu.it web site www.hamamatsu.com
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